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| 2SC4115S Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon General Purpose Transistor TO-92S FEATURES Power dissipation PD: Collector current ICM: 3A 0.3 W (Tamb=25 ) 1.50.2 4.00.2 Collector-base voltage 0.46 +0.1 -0.1 15.30.2 0.43 +0.08 -0.07 (1.27 Typ.) V(BR)CBO: 40 V Operating and storage junction temperature range 1 2 3 3.10.2 0.760.1 TJ, Tstg: -55 to +150 2.540.1 1: Emitter 2: Collector 3: Base ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency Measured Using Pulse Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless otherwise specified) Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 200 V MHz TYP MAX UNIT V V V A A Ic= 50A , IE=0 IC= 1 mA , IB=0 IE=50A, IC=0 VCB=30V , IE=0 VEB= 5V , IC=0 VCE=2 V, IC= 0.1A IC= 2A, IB=0.1A fT VCE=2V, IC=0.5 A F=100MHz CLASSIFICATION OF hFE Rank Range Q 120-270 R 180-390 S 270-560 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SC4115S Elektronische Bauelemente NPN Silicon General Purpose Transistor Electrical characteristic curves 10 5 COLLECTOR CURRENT : IC (A) VCE=2V 2 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 Ta=100C 25C -40C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.6 20mA 18mA 16mA 14mA Ta=25C 12mA 10mA 8mA 6mA 5 50mA 45mA 40mA 4 Ta=25C 35mA 30mA 25mA 20mA 15mA 10mA 1.2 3 4mA 0.8 2 5mA 2mA 0.4 1 IB=0A 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.2 0.4 0.6 0.8 IB=0A 1.0 0 0 1 2 3 4 5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 2 1 0.5 0.2 0.1 50m 20m 10m 5m Ta=100C 25C -40C IC/IB=10 1 lC/lB=20 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=100C 25C -40C DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100C 25C -40C 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=20 TRANSITION FREQUENCY : fT (MHz) 1 0.5 0.2 0.1 50m 20m 10m 5m 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 500 200 100 50 20 10 5 2 1 -1 -2 Ta=25C VCE=2V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 1000 1000 500 Ta=25C f=1MHz IE=0A IC=0A 200 100 Cob Ta=100C 25C -40C Cob 50 20 10 0.1 0.2 -5 -10 -20 -50 -100 -200 -500 -1000 EMITTER CURRENT : IE (mA) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2 |
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